Single crystal growth and anisotropic magnetic properties of HoAl2Ge2

We have grown a single crystal of HoAl2Ge2, which crystallizes in the hexagonal CaAl2Si2 type structure with Ho ions in the trigonal coordination in the ab plane. The data obtained from the bulk measurement techniques of magnetization, heat capacity and transport reveal that HoAl2Ge2 orders antiferromagnetically at TN 6.5 K. The susceptibility below TN and isothermal magnetization at 2 K indicate the ab plane as the easy plane of magnetization. Heat capacity data reveal a prominent Schottky anomaly with a broad peak centered around 25 K, suggesting a relatively low crystal electric field (CEF) splitting. The electrical resistivity reveals the occurrence of a superzone gap below TN. The point charge model of the CEF is applied to the magnetization and the heat capacity data. While a good fit to the paramagnetic susceptibility is obtained, the CEF parameters do not provide a satisfactory fit to the isothermal magnetization at 2 K and the Schottky anomaly.