This paper presents the advanced version of novel piezoelectric oxide semiconductor field effect transistor (POSFET) devices-based tactile sensing chip. The new version of the tactile sensing chip presented here comprises of a 4 × 4 array of POSFET touch sensing devices and integrated interface electronics (i.e., multiplexers, high compliance current sinks, and voltage output buffers). The chip also includes four temperature diodes for the measurement of contact temperature. Various components on the chip have been characterized systematically and the overall operation of the tactile sensing system has been evaluated. With new design, the POSFET devices have improved performance [i.e., linear response in the dynamic contact forces range of 0.01–3 N and sensitivity (without amplification) of 102.4 mV/N], which is more than twice the performance of their previous implementations. The integrated interface electronics result in reduced interconnections which otherwise would be needed to connect the POSFET array with off-chip interface electronic circuitry. This paper paves the way for CMOS implementation of full on-chip tactile sensing systems based on POSFETs.

Tactile sensing chips with POSFET array and integrated interface electronics

PINNA, LUIGI;VALLE, MAURIZIO;
2014-01-01

Abstract

This paper presents the advanced version of novel piezoelectric oxide semiconductor field effect transistor (POSFET) devices-based tactile sensing chip. The new version of the tactile sensing chip presented here comprises of a 4 × 4 array of POSFET touch sensing devices and integrated interface electronics (i.e., multiplexers, high compliance current sinks, and voltage output buffers). The chip also includes four temperature diodes for the measurement of contact temperature. Various components on the chip have been characterized systematically and the overall operation of the tactile sensing system has been evaluated. With new design, the POSFET devices have improved performance [i.e., linear response in the dynamic contact forces range of 0.01–3 N and sensitivity (without amplification) of 102.4 mV/N], which is more than twice the performance of their previous implementations. The integrated interface electronics result in reduced interconnections which otherwise would be needed to connect the POSFET array with off-chip interface electronic circuitry. This paper paves the way for CMOS implementation of full on-chip tactile sensing systems based on POSFETs.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11567/771822
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