In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative changes in the transport properties of the dot, depending on the strength of the electron-phonon coupling and on the applied voltage. In particular, critical thresholds in voltage and relaxation are found such that a suppression below 1/2 of the Fano factor is possible. Additionally, the current is either enhanced or suppressed by increasing relaxation, depending on bias being greater or smaller than the above threshold. These results exist for any strength of the electron-phonon coupling and are confirmed by a four states toy model.
Anomalous suppression of the shot noise in a nanoelectromechanical system
CAVALIERE, FABIO;SASSETTI, MAURA
2006-01-01
Abstract
In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative changes in the transport properties of the dot, depending on the strength of the electron-phonon coupling and on the applied voltage. In particular, critical thresholds in voltage and relaxation are found such that a suppression below 1/2 of the Fano factor is possible. Additionally, the current is either enhanced or suppressed by increasing relaxation, depending on bias being greater or smaller than the above threshold. These results exist for any strength of the electron-phonon coupling and are confirmed by a four states toy model.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
