We report magnetoresistance ( MR) measurements on MgB2 and the corresponding full account from ab initio calculations; we suggest that this combination can be a useful tool to probe electron-phonon coupling. We obtain good quantitative agreement between high-field measurements on neutron-irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of magnetic fields (0-28 T) and temperatures (40-300 K), and as a function of the field orientation. The crossovers between in-plane and out-of-plane MR, experimentally observed as a function of either disorder or temperature are well reproduced indicating that disorder and interaction with phonons strongly affect the scattering rate of sigma-carriers.

Probing the electron-phonon coupling in MgB2 through magnetoresistance measurements in neutron irradiated thin films

GALLEANI D'AGLIANO, ENRICO;PUTTI, MARINA
2008-01-01

Abstract

We report magnetoresistance ( MR) measurements on MgB2 and the corresponding full account from ab initio calculations; we suggest that this combination can be a useful tool to probe electron-phonon coupling. We obtain good quantitative agreement between high-field measurements on neutron-irradiated epitaxial thin films and calculations within Bloch-Boltzmann transport theory over a wide range of magnetic fields (0-28 T) and temperatures (40-300 K), and as a function of the field orientation. The crossovers between in-plane and out-of-plane MR, experimentally observed as a function of either disorder or temperature are well reproduced indicating that disorder and interaction with phonons strongly affect the scattering rate of sigma-carriers.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11567/248568
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