This paper reports an experimental study aimed to develop a suitable and reliable procedure to graft organic molecular fragments onto silicon surfaces, leading to a stable organic termination. Grafting of self-assembled organic films on the (0 0 1) surface of Si is performed by SC1/SC2 processing and by a bromination step preceding the nucleophilic reaction with the organic aromatic compound. After each wet processing step the Si(0 0 1) morphology is investigated using atomic force microscopy to correlate the etching chemistry and the substrate morphology. The bromination step is observed to cause a strong increase of surface roughness due to the formation of pyramid-shaped nanostructures. Controlling the surface roughness as induced by chemical processing is suggested as a fundamental goal towards an increase of the organic film coverage and stability. Correcting actions and enabling prevention of surface damage are proposed and discussed.
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|Titolo:||Morphology changes of Si(001) surfaces during wet chemical halogenation|
|Autori interni:||BRACCO, GIANANGELO|
|Data di pubblicazione:||2003|
|Rivista:||APPLIED SURFACE SCIENCE|
|Appare nelle tipologie:||01.01 - Articolo su rivista|