Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 muOmega cm and T-c from 29.5 to 38.8 K were measured up to 28 T. H-c2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms. (C) 2004 Elsevier B.V. All rights reserved.
Upper critical fields of MgB2 thin films
MANFRINETTI, PIETRO;MARRE', DANIELE;PUTTI, MARINA;
2004-01-01
Abstract
Critical fields of four MgB2 thin films with a normal state resistivity ranging from 5 to 50 muOmega cm and T-c from 29.5 to 38.8 K were measured up to 28 T. H-c2(T) curves present a linear behavior towards low temperatures. Very high critical field values have been found, up to 24 T along the c-axis and 57 T in the basal plane not depending on the normal state resistivity values. In this paper, critical fields will be analyzed taking into account the multiband nature of MgB2; we will show that resistivity and upper critical fields can be ascribed to different scattering mechanisms. (C) 2004 Elsevier B.V. All rights reserved.
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