Charge injection in MOS switches in a deep submicron technology has been analysed. The analysis has been extended to the general case of including the conduction of the MOS transistor in the moderate and weak inversion regions, using a continuous and physical formulation based on the EKV model. SPICE simulations, based on the BSIM3v3 model, which ensures the charge conservation, have demonstrated the validity of our work.
Modeling charge injection in MOS analog switches using a compact model in a deep submicron technology
VALLE, MAURIZIO
2006-01-01
Abstract
Charge injection in MOS switches in a deep submicron technology has been analysed. The analysis has been extended to the general case of including the conduction of the MOS transistor in the moderate and weak inversion regions, using a continuous and physical formulation based on the EKV model. SPICE simulations, based on the BSIM3v3 model, which ensures the charge conservation, have demonstrated the validity of our work.
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