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EnglishThis paper presents a toolbox in which a compact high abstraction level formulation of the MOS drain current was implemented. The formulation is based on the popular ACM compact MOS model: the approximations introduced in the model preserve the drain-to-source device symmetry and the continuity between all regions of operation (i.e. weak, moderate and strong inversion). The technological parameters involved in the formulation are obtained by means of a fully automatic extraction procedure. Finally, a detailed case study, in which a behavioural analysis of sample-and-hold circuits using the proposed toolbox is performed, is presented. The ATMEL 0.24@mm CMOS process was used as reference for the case study. The MATLAB environment was used to implement the drain current model formulation, the technological parameters extraction and the case study as well.
High abstraction level CAD tool implementation of MOS drain current models / W. PRODANOV; M. VALLE. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - ELETTRONICO. - 40(2009), pp. 1225-1234.
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| Titolo: | High abstraction level CAD tool implementation of MOS drain current models | |
| Autori: | ||
| Data di pubblicazione: | 2009 | |
| Rivista: | ||
| Citazione: | High abstraction level CAD tool implementation of MOS drain current models / W. PRODANOV; M. VALLE. - In: MICROELECTRONICS JOURNAL. - ISSN 0959-8324. - ELETTRONICO. - 40(2009), pp. 1225-1234. | |
| Handle: | http://hdl.handle.net/11567/220780 | |
| Appare nelle tipologie: | 01.01 - Articolo su rivista |
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http://hdl.handle.net/11567/220780
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