DSA-type anode based on conductive p-Silicon substrate

In the search for a good dimensionally stable anode-type electrode, p-silicon ~1-3 mV cm! has been chosen as the substrate material due to its high anodic stability and its reasonable cost compared to titanium and tantalum. Several p-Si/IrO2 electrodes have been prepared by thermal decomposition at different temperature. The effect of preparation temperature on the morphological and electrochemical properties has been investigated by scanning electron microscopy analysis, X-ray diffraction, and cyclic voltammetries in 1 M HClO4 showing that p-Si/IrO2 prepared at 450°C presents a high surface area and a low degree of crystallinity, while increasing the calcination temperature resulted in a decrease of true area and an increase in crystallite size. The activity of p-Si/IrO2 electrodes for simple electron transfer reactions and for complex electrode reactions has been also studied by cyclic voltammetry and linear polarization in solutions containing the hydroquinone/benzoquinone redox couple and various organic compounds ~isopropanol, tert-butanol, methanol!. Finally, the anodic stability of a p-Si/IrO2 electrodes prepared at 450°C has been tested by an accelerated service life test. p-Silicon based electrodes were shown to have the highest standardized service life compared with that of titanium- or tantalum-based electrodes.