A new method for extracting the base and emitter recombination parameters of silicon power p+-v-n+ diodes from open circuit voltage decay (OCVD) curves and reverse recovery data has been developed. The method relies on an optimization technique which makes use of numerical one-dimensional modeling data for obtaining the best fitting of experimental curves. For slow diodes, the fitting concerns only OCVD data, while, for fast diodes, both OCVD and reverse recovery data are considered. The effects of the four recombination parameters considered (high- and low-level lifetimes in the v-base, quadratic and linear terms of emitter recombination) are critically discussed for undoped and electron-irradiated diodes, comparing also simulated and experimental forward voltage drop data.
Determination of Silicon Power Diode Recombination Parameters by Combining Open Circuit Voltage Decay and Storage Time - Reverse Recovery Data
DI ZITTI, ERMANNO;BISIO, GIACOMO
1991-01-01
Abstract
A new method for extracting the base and emitter recombination parameters of silicon power p+-v-n+ diodes from open circuit voltage decay (OCVD) curves and reverse recovery data has been developed. The method relies on an optimization technique which makes use of numerical one-dimensional modeling data for obtaining the best fitting of experimental curves. For slow diodes, the fitting concerns only OCVD data, while, for fast diodes, both OCVD and reverse recovery data are considered. The effects of the four recombination parameters considered (high- and low-level lifetimes in the v-base, quadratic and linear terms of emitter recombination) are critically discussed for undoped and electron-irradiated diodes, comparing also simulated and experimental forward voltage drop data.
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