LuNi2B2C films have been prepared by a Pulsed Laser Deposition technique. The deposition parameters have been optimized to reach good superconducting, structural and morphological properties with high reliability. In order to deposit different patterned layers for in-situ junctions production, a special set-up for the in situ interchanging of shadow masks has been developed. We studied the growth of different materials to be used as barrier layers. New results on the temperature dependence of the LuNi2B2C gap using S/N contact junctions are presented and discussed.
Superconducting properties of LuNi2B2C films and junctions
CANEPA, FABIO MICHELE
2000-01-01
Abstract
LuNi2B2C films have been prepared by a Pulsed Laser Deposition technique. The deposition parameters have been optimized to reach good superconducting, structural and morphological properties with high reliability. In order to deposit different patterned layers for in-situ junctions production, a special set-up for the in situ interchanging of shadow masks has been developed. We studied the growth of different materials to be used as barrier layers. New results on the temperature dependence of the LuNi2B2C gap using S/N contact junctions are presented and discussed.
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