A complete four-dimensional solution T(x, y, z, t) to the classical dynamic heat-flow equation, for the case where the power sources lie on the silicon surface, is presented. The solution is found by: (i) applying multiple finite Fourier transforms with respect to x and y; (ii) Laplace-transforming with respect to time; (iii) solving the resulting differential equations for the z variable and determining the Fourier components; (iv) performing the inverse Laplace transforms for all the Fourier terms and summing them. The solution has been used to simulate the thermal behaviour of several different IC power configurations.

Characterization of the Thermal Behaviour in ICs

CURATELLI, FRANCESCO;
1991-01-01

Abstract

A complete four-dimensional solution T(x, y, z, t) to the classical dynamic heat-flow equation, for the case where the power sources lie on the silicon surface, is presented. The solution is found by: (i) applying multiple finite Fourier transforms with respect to x and y; (ii) Laplace-transforming with respect to time; (iii) solving the resulting differential equations for the z variable and determining the Fourier components; (iv) performing the inverse Laplace transforms for all the Fourier terms and summing them. The solution has been used to simulate the thermal behaviour of several different IC power configurations.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11567/184577
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