Secondary phases, such as ZnSe, occur in Cu2ZnSnSe4and can be detrimental to the resulting solar cell performance. Therefore, it is important to have simple tools to detect them. We introduce subband gap defect excitation room temperature photoluminescence of ZnSe as a practical and non-destructive method to discern the ZnSe secondary phase in the solar cell absorber. The PL is excited by the green emission of an Ar ion laser and is detected in the energy range of 1.2-1.3 eV. A clear spatial correlation with the ZnSe Raman signal confirms this attribution. © 2013 AIP Publishing LLC.

Detecting ZnSe secondary phase in Cu2ZnSnSe4by room temperature photoluminescence

Colombara, Diego;
2013-01-01

Abstract

Secondary phases, such as ZnSe, occur in Cu2ZnSnSe4and can be detrimental to the resulting solar cell performance. Therefore, it is important to have simple tools to detect them. We introduce subband gap defect excitation room temperature photoluminescence of ZnSe as a practical and non-destructive method to discern the ZnSe secondary phase in the solar cell absorber. The PL is excited by the green emission of an Ar ion laser and is detected in the energy range of 1.2-1.3 eV. A clear spatial correlation with the ZnSe Raman signal confirms this attribution. © 2013 AIP Publishing LLC.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11567/939870
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