Detecting ZnSe secondary phase in Cu2ZnSnSe4by room temperature photoluminescence

Djemour, Rabie; Mousel, Marina; Redinger, Alex; Gütay, Levent; Crossay, Alexandre; Colombara, Diego; Dale, Phillip J.; Siebentritt, Susanne

doi:10.1063/1.4808384

Secondary phases, such as ZnSe, occur in Cu2ZnSnSe4and can be detrimental to the resulting solar cell performance. Therefore, it is important to have simple tools to detect them. We introduce subband gap defect excitation room temperature photoluminescence of ZnSe as a practical and non-destructive method to discern the ZnSe secondary phase in the solar cell absorber. The PL is excited by the green emission of an Ar ion laser and is detected in the energy range of 1.2-1.3 eV. A clear spatial correlation with the ZnSe Raman signal confirms this attribution. © 2013 AIP Publishing LLC.

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Titolo:	Detecting ZnSe secondary phase in Cu2ZnSnSe4by room temperature photoluminescence
Autori:	Djemour, Rabie Mousel, Marina Redinger, Alex Gütay, Levent Crossay, Alexandre COLOMBARA, DIEGO Dale, Phillip J. Siebentritt, Susanne mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2013
Rivista:	APPLIED PHYSICS LETTERS
Handle:	http://hdl.handle.net/11567/939870
Appare nelle tipologie:	01.01 - Articolo su rivista

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http://hdl.handle.net/11567/939870

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