Thin films of Cu 3BiS 3 have been produced by conversion of stacked and co-electroplated Bi-Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550°C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics. © 2012 Elsevier B.V. All rights reserved.
Formation of Cu 3BiS 3 thin films via sulfurization of Bi-Cu metal precursors
Colombara, D.;
2012-01-01
Abstract
Thin films of Cu 3BiS 3 have been produced by conversion of stacked and co-electroplated Bi-Cu metal precursors in the presence of elemental sulfur vapor. The roles of sulfurization temperature and heating rate in achieving single-phase good quality layers have been explored. The potential loss of Bi during the treatments has been investigated, and no appreciable compositional difference was found between films sulfurized at 550°C for up to 16 h. The structural, morphological and photoelectrochemical properties of the layers were investigated in order to evaluate the potentials of the compound for application in thin film photovoltaics. © 2012 Elsevier B.V. All rights reserved.
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