The quality control of individual semiconductor thin films during fabrication of multiple layers is important for industry and academia. The ultimate aim of this research is to predict the efficiency of p-n junction solar cells by photoelectrochemical analysis of the bare p-type semiconductor. A linear correlation between the photocurrent measured electrochemically on Cu(In,Ga)Se2absorber layers through a Eu3 +electrolyte junction and short circuit current and efficiency of the corresponding solid state devices is found. However, the correlation is complicated by pronounced recombination at the semiconductor/electrolyte interface, while the solid state interface behaves more ideally.
|Titolo:||Prediction of photovoltaic p-n device short circuit current by photoelectrochemical analysis of p-type CIGSe films|
|Data di pubblicazione:||2014|
|Appare nelle tipologie:||01.01 - Articolo su rivista|
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