Temperature- and doping-dependent nanoscale Schottky barrier height at the Au/Nb:SrTiO3interface

We use ballistic electron emission microscopy to investigate prototypical Au/Nb-doped SrTiO3(NSTO) Schottky barrier diodes for different temperatures and doping levels. To this end, ultrathin Au overlayers are thermally evaporated onto TiO2-terminated NSTO single crystal substrates. We show that at room temperature, regardless of the nominal doping, rectification is controlled by a spatially inhomogeneous Schottky barrier height (SBH), which varies on a length scale of tens of nanometers according to a Gaussian distribution with a mean value of 1.29-1.34 eV and the standard deviation in the range of 80-100 meV. At lower temperatures, however, doping effects become relevant. In particular, junctions with a low Nb content of 0.01 and 0.05 wt. % show an ∼300 meV decrease in the mean SBH from room temperature to 80 K, which can be explained by an electrostatic analysis assuming a temperature-dependent dielectric permittivity for NSTO. In contrast, this model fails to predict the weaker temperature dependence of SBH for junctions based on 0.5 wt. % NSTO. Our nanoscale investigation demands to reassess conventional models for the NSTO polarizability in high-intensity electric fields. Furthermore, it contributes to the comprehension and prediction of transport in metal/SrTiO3junctions and devices.