Ab initio nonequilibrium Keldysh formalism based on an N-order renormalization technique is used to compute I(V) ballistic electron emission microscopy characteristics at the Au/Ge(001) interface. Such a formalism quantitatively reproduces precise experimental measurements under ultrahigh vacuum and low-temperature conditions. At T=0 K, the ballistic current follows the law (V-VSB)2.1, VSB being the Schottky barrier. At T>0 K, temperature effects become significant near the onset and must be taken into account to identify an accurate value for VSB from a best-fit procedure. We find two values for VSB, 0.67 and 0.75 eV, which we associate with two different atomic registries at the interface.

Accurate ab initio determination of ballistic electron emission spectroscopy: Application to Au/Ge

Manca, N.;Marrè, D.;
2018-01-01

Abstract

Ab initio nonequilibrium Keldysh formalism based on an N-order renormalization technique is used to compute I(V) ballistic electron emission microscopy characteristics at the Au/Ge(001) interface. Such a formalism quantitatively reproduces precise experimental measurements under ultrahigh vacuum and low-temperature conditions. At T=0 K, the ballistic current follows the law (V-VSB)2.1, VSB being the Schottky barrier. At T>0 K, temperature effects become significant near the onset and must be taken into account to identify an accurate value for VSB from a best-fit procedure. We find two values for VSB, 0.67 and 0.75 eV, which we associate with two different atomic registries at the interface.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11567/933941
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