Iodine (I2) -assisted, 30 keV Ga+ focused ion beam (FIB) has been employed to fabricate nanogap Au electrodes and has been compared to conventional FIB milling. Electrical characterization shows that I2 assistance improves insulation resistance from 300-400 G to 20-50 T. Auger depth profiling reveals that the Ga concentration profile in FIB-milled samples has a peak value of 25 at. % at 7 nm and extends, with a decreasing Gaussian tail, down to 40 nm, whereas in I2 -processed samples Ga concentration is reduced below 5 at. %. I2 assistance is found to increase minimum gap size from 8 to 16 nm and to markedly roughen Au surface morphology. © 2006 American Institute of Physics.
Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I2-assisted focused ion beam
Angeli, E.;
2006-01-01
Abstract
Iodine (I2) -assisted, 30 keV Ga+ focused ion beam (FIB) has been employed to fabricate nanogap Au electrodes and has been compared to conventional FIB milling. Electrical characterization shows that I2 assistance improves insulation resistance from 300-400 G to 20-50 T. Auger depth profiling reveals that the Ga concentration profile in FIB-milled samples has a peak value of 25 at. % at 7 nm and extends, with a decreasing Gaussian tail, down to 40 nm, whereas in I2 -processed samples Ga concentration is reduced below 5 at. %. I2 assistance is found to increase minimum gap size from 8 to 16 nm and to markedly roughen Au surface morphology. © 2006 American Institute of Physics.
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