Novel ballistic electron emission microscopy experiments are reported, aimed to directly visualize and quantify the local inhomogeneities of the effective Schottky barrier height on Au/Nb:SrTiO3 Schottky junctions dominated by interfacial resistance switching effects. The voltage-dependent variation of the local barrier height of the nanometric patches could explain the non-ideal behaviour of the resistance switching effects in transition-metal oxide cells.
Ballistic Transport at the Nanometric Inhomogeneities in Au/Nb:SrTiO3 Resistive Switches
GADALETA, ALESSANDRO;CAMINALE, MICHAEL;Siri, Antonio Sergio;MARRE', DANIELE
2014-01-01
Abstract
Novel ballistic electron emission microscopy experiments are reported, aimed to directly visualize and quantify the local inhomogeneities of the effective Schottky barrier height on Au/Nb:SrTiO3 Schottky junctions dominated by interfacial resistance switching effects. The voltage-dependent variation of the local barrier height of the nanometric patches could explain the non-ideal behaviour of the resistance switching effects in transition-metal oxide cells.
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