In this article we present a common-drain floating gate bias circuit design for POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing devices. A graphical-aided methodology, intended to furnish a criterion that assures the selection of the most appropriate bias resistance value, is presented. © 2012 Springer Science+Business Media, LLC.

POSFET touch sensing devices: Bias circuit design based on the ACM MOS transistor compact model

BARBONI, LEONARDO;VALLE, MAURIZIO;
2012

Abstract

In this article we present a common-drain floating gate bias circuit design for POSFET (Piezoelectric Oxide Semiconductor Field Effect Transistor) touch sensing devices. A graphical-aided methodology, intended to furnish a criterion that assures the selection of the most appropriate bias resistance value, is presented. © 2012 Springer Science+Business Media, LLC.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11567/536328
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