This paper presents the bias circuit design for realizing the high value resistance at the floating gate of Piezoelectric Oxide Semiconductor Field Effect Transistor (POSFET). The application of POSFET has been reported in papers for tactile sensing. High value resistance has been achieved through well to drain connected PMOS device working in weak inversion. The mathematical formulations of the devices were based on the concept of EKV equations. Mathematical derivation and analysis was made to calculate the value of resistance, and then bias voltage and bias current for the proposed circuit. Simulation results show that the proposed circuit arrangement is able to realize the high value resistance. © 2011 IEEE.
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