This paper presents an approach to realize very high value of resistance through well to source connected PMOS devices working in weak inversion. The derivations of formulas were based on the concept of EKV equation at weak inversion. Analysis has been done to correlate conductance with the biasing voltage. The developed approach has been applied to the design of high resistance circuit for Piezo-electric Oxide Semiconductor Field Effect Transistor sensors (used for tactile sensing). Circuit simulation in terms of frequency, transient and noise responses shows that the high resistance works well according to the proposed concept of formulations. © 2011 IEEE.
Scheda prodotto non validato
Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo
|Titolo:||An approach to realize high value resistance using PMOS device at weak inversion for POSFET sensor|
|Data di pubblicazione:||2011|
|Appare nelle tipologie:||04.01 - Contributo in atti di convegno|