The properties of the phononic distribution of a mechanical oscillator coupled to a single-electron transistor are investigated in the sequential tunnelling regime. It is shown that for not too strong electron–phonon interaction the electrical current may induce a distribution of phonons with sub-Poissonian statistics, which is characterized by a selective population of few phonon states. Depending on the choice of parameters, such a sub-Poissonian phonon distribution can be accompanied either by a super- or a sub-Poissonian electronic Fano factor.
Sub-Poissonian phononic population in a nanoelectromechanical system
CAVALIERE, FABIO;SASSETTI, MAURA
2008-01-01
Abstract
The properties of the phononic distribution of a mechanical oscillator coupled to a single-electron transistor are investigated in the sequential tunnelling regime. It is shown that for not too strong electron–phonon interaction the electrical current may induce a distribution of phonons with sub-Poissonian statistics, which is characterized by a selective population of few phonon states. Depending on the choice of parameters, such a sub-Poissonian phonon distribution can be accompanied either by a super- or a sub-Poissonian electronic Fano factor.
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