The R2FeSi2 compounds with R=Gd, Tb, Dy, Ho, Er, Tm, Y, and R2CoSi2 with R=Ho, Er, Tm, were synthesized and studied by X-ray powder diffraction. All phases crystallize in the Sc2CoSi2 monoclinic structure type, and the atomic positional and thermal parameters were refined by single crystal data for Tb2FeSi2, Er2FeSi2 and Er2CoSi2. The measurement of the electrical resistance in the 13–300 K temperature range showed for all phases, save the yttrium compounds, a transition point which indicates an order–disorder magnetic change. The scaling of these temperatures with the de Gennes factor gives a good correlation, with some slight deviations probably due to crystal electric field effects.

Crystal structure and electrical properties of the new R2TSi2 compounds (R=rare earths; T=Fe,Co)

MERLO, FRANCO;PANI, MARCELLA;FORNASINI, MARIA LUISA
2004-01-01

Abstract

The R2FeSi2 compounds with R=Gd, Tb, Dy, Ho, Er, Tm, Y, and R2CoSi2 with R=Ho, Er, Tm, were synthesized and studied by X-ray powder diffraction. All phases crystallize in the Sc2CoSi2 monoclinic structure type, and the atomic positional and thermal parameters were refined by single crystal data for Tb2FeSi2, Er2FeSi2 and Er2CoSi2. The measurement of the electrical resistance in the 13–300 K temperature range showed for all phases, save the yttrium compounds, a transition point which indicates an order–disorder magnetic change. The scaling of these temperatures with the de Gennes factor gives a good correlation, with some slight deviations probably due to crystal electric field effects.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11567/246573
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