In this work we propose a simple model for the operation of the short channel MOSFET in weak and strong inversion. This model shows a better agreement to experimental data than previous models and is well suited for use in circuit simulation programs.
CAD Model for Threshold and Subthreshold Conduction in Short channel MOSFET’s
CAVIGLIA, DANIELE;
1981-01-01
Abstract
In this work we propose a simple model for the operation of the short channel MOSFET in weak and strong inversion. This model shows a better agreement to experimental data than previous models and is well suited for use in circuit simulation programs.
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