All-inorganic perovskite materials are attracting the attention of researchers owing to the good performance that they exhibit in optoelectronic device applications. In particular, cesium lead halide single crystals are of interest for their electric conductivity. However, the conductive properties of these materials are still far from being fully understood. In this work, we used several scanning probe microscopy techniques to investigate different properties of CsPbBr 3 single crystals, namely their topography, electric conductivity, electric surface potential and ferroelectricity. We observed heterogeneity in conductance and work function of the different facets by using conductive atomic force microscopy and Kelvin probe force microscopy measurements. Additionally, piezoresponse force microscopy was carried out to gain insight on the origin of the hysteresis in our microcrystals. Our results show the absence of ferroelectric domains and we attribute the I -V hysteresis to ionic migration within the crystal.

Evaluating the optoelectronic properties of individual CsPbBr3 microcrystals by electric AFM techniques

Hassen, Fredj;Salerno, Marco
2024-01-01

Abstract

All-inorganic perovskite materials are attracting the attention of researchers owing to the good performance that they exhibit in optoelectronic device applications. In particular, cesium lead halide single crystals are of interest for their electric conductivity. However, the conductive properties of these materials are still far from being fully understood. In this work, we used several scanning probe microscopy techniques to investigate different properties of CsPbBr 3 single crystals, namely their topography, electric conductivity, electric surface potential and ferroelectricity. We observed heterogeneity in conductance and work function of the different facets by using conductive atomic force microscopy and Kelvin probe force microscopy measurements. Additionally, piezoresponse force microscopy was carried out to gain insight on the origin of the hysteresis in our microcrystals. Our results show the absence of ferroelectric domains and we attribute the I -V hysteresis to ionic migration within the crystal.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11567/1177855
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