This paper deals with the susceptibility to electromagnetic interference of CMOS integrated current sensors for power transistor current monitoring. Conventional integrated solution are first considered, hence a new integrated current sensor based on the Hall effect in MOS transistors (MagFET) is proposed. The susceptibility to radio frequency interference of a conventional (wired) current sensor and that of the MagFET-based solution is discussed. © 2009 IEEE.
A new current sensor based on MagFET highly immune to EMI
Aiello O.;
2009-01-01
Abstract
This paper deals with the susceptibility to electromagnetic interference of CMOS integrated current sensors for power transistor current monitoring. Conventional integrated solution are first considered, hence a new integrated current sensor based on the Hall effect in MOS transistors (MagFET) is proposed. The susceptibility to radio frequency interference of a conventional (wired) current sensor and that of the MagFET-based solution is discussed. © 2009 IEEE.
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