The accessible emission spectral range of lead halide perovskite (LHP) CsPbX3 (X = Cl, Br, I) nanocrystals (NCs) has remained so far limited to wavelengths below 1 μm, corresponding to the emission line of Yb3+, whereas the direct sensitization of other near-infrared (NIR) emitting lanthanide ions is unviable. Herein, we present a general strategy to enable intense NIR emission from Er3+ at ∼1.5 μm, Ho3+ at ∼1.0 μm and Nd3+ at ∼1.06 μm through a Mn2+-mediated energy-transfer pathway. Steady-state and time-resolved photoluminescence studies show that energy-transfer efficiencies of about 39%, 35% and 70% from Mn2+ to Er3+, Ho3+ and Nd3+ are obtained, leading to photoluminescence quantum yields of ∼0.8%, ∼0.7% and ∼3%, respectively. This work provides guidance on constructing energy-transfer pathways in semiconductors and opens new perspectives for the development of lanthanide-functionalized LHPs as promising materials for optoelectronic devices operating in the NIR region. This journal is

Switching on near-infrared light in lanthanide-doped CsPbCl3perovskite nanocrystals

Locardi F.;
2021-01-01

Abstract

The accessible emission spectral range of lead halide perovskite (LHP) CsPbX3 (X = Cl, Br, I) nanocrystals (NCs) has remained so far limited to wavelengths below 1 μm, corresponding to the emission line of Yb3+, whereas the direct sensitization of other near-infrared (NIR) emitting lanthanide ions is unviable. Herein, we present a general strategy to enable intense NIR emission from Er3+ at ∼1.5 μm, Ho3+ at ∼1.0 μm and Nd3+ at ∼1.06 μm through a Mn2+-mediated energy-transfer pathway. Steady-state and time-resolved photoluminescence studies show that energy-transfer efficiencies of about 39%, 35% and 70% from Mn2+ to Er3+, Ho3+ and Nd3+ are obtained, leading to photoluminescence quantum yields of ∼0.8%, ∼0.7% and ∼3%, respectively. This work provides guidance on constructing energy-transfer pathways in semiconductors and opens new perspectives for the development of lanthanide-functionalized LHPs as promising materials for optoelectronic devices operating in the NIR region. This journal is
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11567/1066438
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