A fully-automatic CAD toolbox for a MOS drain current model and its parameters extraction

This paper presents a CAD toolbox for a compact formulation of the MOS drain current. The formulation is based on the popular ACM model: the approximations introduced in the model preserve the drain-to-source device symmetry and the continuity between all regions of operation (i.e. weak, moderate and strong inversion). The major issue of the availability of the technological parameters is faced and a parameters extraction approach in a fully automated procedure were implemeted in the same toolbox. Finally, an example of application of the toolbox is presented. In the example a behavioral analysis of a sample-and-hold circuit is performed.