The paper addresses the issue of Schottky barrier effects in carbon Nanotube field effect transistors and outlines some solutions to tackle such problem. Microfabricated test patterns have been designed to allow the deposition in a controlled way of single wall nanotubes between different couples of source and drain electrodes in a backgate device architecture. Current‐voltage characteristics depending on the back gate applied voltage have been recorded and briefly discussed. Through a proper exploitation of ad‐hoc developed contact arrays for CNFET fabrication, a strategy for the direct measurement of metal‐CN and CN‐CN junction characteristics has been described. © 2005 American Institute of Physics
Investigating Schottky Barrier Effects in Carbon nanotube Field Effect Transistors
A. ANSALDO;RICCI, DAVIDE FRANCESCO;GATTI, FLAVIO;DI ZITTI, ERMANNO;CINCOTTI, SILVANO
2005-01-01
Abstract
The paper addresses the issue of Schottky barrier effects in carbon Nanotube field effect transistors and outlines some solutions to tackle such problem. Microfabricated test patterns have been designed to allow the deposition in a controlled way of single wall nanotubes between different couples of source and drain electrodes in a backgate device architecture. Current‐voltage characteristics depending on the back gate applied voltage have been recorded and briefly discussed. Through a proper exploitation of ad‐hoc developed contact arrays for CNFET fabrication, a strategy for the direct measurement of metal‐CN and CN‐CN junction characteristics has been described. © 2005 American Institute of Physics
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