Due to the availability and low cost of the elements, the semiconductor compounds in the system Cu-Sb-Bi-S(e) are being studied as sustainable alternatives to CuIn(Ga)S(e)2 for thin-film photovoltaic applications. The samples have been produced by one-step or multi-step electrodepositions from aqueous solutions followed by chalcogenization of the metallic precursors. The new materials have been characterized by structural, electrical and photoelectrochemical techniques in order to establish their suitability as absorber layer materials for thin film solar cells. Photoactive compounds have been synthesised that have band-gap energies matching the Shockley-Queisser requirements for the efficient harvesting of the solar spectrum. Further studies are being carried out in order to improve the photon to current efficiency of these absorber materials.
Formation of Cu3BiS3 as absorber material for TFSC
Diego Colombara;
2011-01-01
Abstract
Due to the availability and low cost of the elements, the semiconductor compounds in the system Cu-Sb-Bi-S(e) are being studied as sustainable alternatives to CuIn(Ga)S(e)2 for thin-film photovoltaic applications. The samples have been produced by one-step or multi-step electrodepositions from aqueous solutions followed by chalcogenization of the metallic precursors. The new materials have been characterized by structural, electrical and photoelectrochemical techniques in order to establish their suitability as absorber layer materials for thin film solar cells. Photoactive compounds have been synthesised that have band-gap energies matching the Shockley-Queisser requirements for the efficient harvesting of the solar spectrum. Further studies are being carried out in order to improve the photon to current efficiency of these absorber materials.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
