This paper presents a behavioral model of the non-linear on-resistance in S&H analog switches. The model is suitable for analysis and design of low-voltage sampled data systems. Simulated results using the ATMEL 0.24μm CMOS process are shown to validate the model. The Advanced-Compact-Mosfet model (ACM), a symmetric drain-to-source model, valid in the whole inversion level regime of MOS transistors, is used as reference.

A behavioral model for the non-linear on-resistance in sample-and-hold analog switches

PRODANOV, WILLIAM;VALLE, MAURIZIO
2005-01-01

Abstract

This paper presents a behavioral model of the non-linear on-resistance in S&H analog switches. The model is suitable for analysis and design of low-voltage sampled data systems. Simulated results using the ATMEL 0.24μm CMOS process are shown to validate the model. The Advanced-Compact-Mosfet model (ACM), a symmetric drain-to-source model, valid in the whole inversion level regime of MOS transistors, is used as reference.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11567/536522
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 5
  • ???jsp.display-item.citation.isi??? 4
social impact