We report results obtained performing the fabrication of a back gate Field Effect Transistor that uses a rope of single wall nanotubes as channel. Nanotubes were made using the LASER ablation technique and they were characterized using micro-RAMAN spectroscopy, SEM and AFM imaging. A self-assembly method based on a high frequency electric field was used to direct the placement of nanotube ropes between source and drain gold electrodes made by low cost standard microlithographic techniques. Measurements of the electrical transport in the nanotube ropes depending on the applied gate voltage are reported.
Fabrication of Field Effect Transistors based on carbon nanotubes made by LASER ablation
GATTI, FLAVIO;RICCI D.;DI ZITTI, ERMANNO
2004-01-01
Abstract
We report results obtained performing the fabrication of a back gate Field Effect Transistor that uses a rope of single wall nanotubes as channel. Nanotubes were made using the LASER ablation technique and they were characterized using micro-RAMAN spectroscopy, SEM and AFM imaging. A self-assembly method based on a high frequency electric field was used to direct the placement of nanotube ropes between source and drain gold electrodes made by low cost standard microlithographic techniques. Measurements of the electrical transport in the nanotube ropes depending on the applied gate voltage are reported.
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