Porous silicon (PS) thin films have been prepared by electrochemical anodization of p-Si in HF–H2O–EtOH solution and they have been used as substrate material for the preparation of iridium oxide based electrodes (PS/IrO2) using the thermal decomposition technique. The morphology and the electrochemical behaviour of the PS/IrO2 have been studied and the results have been compared with IrO2 electrodes deposited on a sandblasted p-silicon (p-Si/IrO2). SEM analyses have revealed that the PS/IrO2 electrodes are porous, rough and IrO2 appears to be deposited within some silicon pores, while the p-Si/IrO2 present a _mud-cracked_ surface. Cyclic voltammetries in 1 M HClO4 have shown that the PS/IrO2 presents higher surface area than p-Si/IrO2.
DSA-type anode based on conductive porous p-silicon substrate
PANIZZA, MARCO;
2003-01-01
Abstract
Porous silicon (PS) thin films have been prepared by electrochemical anodization of p-Si in HF–H2O–EtOH solution and they have been used as substrate material for the preparation of iridium oxide based electrodes (PS/IrO2) using the thermal decomposition technique. The morphology and the electrochemical behaviour of the PS/IrO2 have been studied and the results have been compared with IrO2 electrodes deposited on a sandblasted p-silicon (p-Si/IrO2). SEM analyses have revealed that the PS/IrO2 electrodes are porous, rough and IrO2 appears to be deposited within some silicon pores, while the p-Si/IrO2 present a _mud-cracked_ surface. Cyclic voltammetries in 1 M HClO4 have shown that the PS/IrO2 presents higher surface area than p-Si/IrO2.
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