The electrical resistivity of the R5Si3 phases with R = Gd, Th, Yb, Lu, Y has been measured in the 10-800 K temperature range. The compounds of Gd and Th exhibit one transformation point, which can be ascribed to magnetic transitions. The temperature dependence of the resistivity of Y5Si3 and Lu5Si3 has been described by a combination of the phonon contribution and an interband scattering term. For Yb5Si3, the different behaviour in the electrical resistivity, the low value of the magnetic moment as well as the anomalous values of the elementary cell constants can be explained assuming a mixed valent state of Yb: a divalent Yb ion in one site set and a trivalent Yb ion in the other site.
Electrical resistivity measurements of some R5Si3 phases: R = Gd, Tb, Yb, Lu and Y
CANEPA, FABIO MICHELE;
1993-01-01
Abstract
The electrical resistivity of the R5Si3 phases with R = Gd, Th, Yb, Lu, Y has been measured in the 10-800 K temperature range. The compounds of Gd and Th exhibit one transformation point, which can be ascribed to magnetic transitions. The temperature dependence of the resistivity of Y5Si3 and Lu5Si3 has been described by a combination of the phonon contribution and an interband scattering term. For Yb5Si3, the different behaviour in the electrical resistivity, the low value of the magnetic moment as well as the anomalous values of the elementary cell constants can be explained assuming a mixed valent state of Yb: a divalent Yb ion in one site set and a trivalent Yb ion in the other site.
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